features low cost diffused junction low leakage low forward voltage drop mechanical data case:jedec do--27,molded plastic mil-std202,method 208 polarity: color band denotes cathode weight: 0.041ounces,1.15 grams mounting position: any ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,50hz,resistive or inductive load. for capacitive load,derate by 20%. units maximum recurrent peak reverse voltage v rrm v ma x imu m rms v olt ag e v rms v maximum dc blocking voltage v dc v maximum average f orw ard rectif ied current 9.5mm lead length, @t a =75 peak forw ard surge current 10ms single half-sine-w ave superimposed on rated load @t j =125 maximum instantaneous forw ard voltage @ i f =1.6a v f v m a x i m u m r e v e r s e c u rr e n t @ t a =25 at rated dc blocking voltage @t a =100 maximum reverse recovery time (note1) t rr ns typical junction capacitance (note2) c j pf typical thermal resistance (note3) r ja /w operating junction temperature range t j storage temperature range t stg 2. measured at 1.0mh z and applied rev erse v oltage of 4.0v dc. i f(av) 3. thermal resistance f rom junction to ambient. a i fsm i r a a note: 1. measured with i f =0.5a, i r =1a, i rr =0.25a. 70 200 140 0.98 1.6 125.0 100 200 easily cleaned with alcohol,isopropanol and similar solvents terminals: axial lead ,solderable per d o - 2 7 100 maximum ratings and electrical characteristics 31df1 31DF2 31 d f1 (z) - - - 31 d f2 (z) high current capability super fast rectifiers voltage range: 100 --- 200 v current: 1.6 a - 55 ----- + 150 - 55 ----- + 150 5.0 50.0 30 90 34 dimensions in millimeters www.diode.kr diode semiconductor korea
amperes average forward current amperes 31 d f1 (z) - - - 31 d f2 (z) instantaneous forward current fi g. 1 -- test ci rcui t di agram and reverse recovery ti me characteri sti c set tim e base for 10 ns/cm notes:1.rise time = 7ns max.input impedance =1m . 22pf. jjjj 2.rise tim e =10ns max.source impedance=50 . instantaneous forward voltage, volts fig.2 -- typical forward characteristic fig.3 -- forward derating curve ambient temperature, fig.4-- typical junction capacitance fi g. 5-- peak forword surge current peak forword surge current amperes number of cycles at 60h z reverse voltage, volts junction capacitace, pf 50 0 25 75 125100 150 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 singl e phase hal f w ave 60h z resisti ve or inductive load 0.375"(9.5mm)lead length 0.1 1.0 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 t j =25 pulse width=300 www.diode.kr diode semiconductor korea
|
